- 专利标题： Nanosheet transistor having abrupt junctions between the channel nanosheets and the source/drain extension regions
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申请号： US17136160申请日： 2020-12-29
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公开(公告)号： US11355649B2公开(公告)日： 2022-06-07
- 发明人: Choonghyun Lee , Kangguo Cheng , Juntao Li , Shogo Mochizuki
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Samuel Waldraum
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/775 ; H01L29/161 ; H01L29/06 ; H01L29/66 ; H01L29/423
摘要：
Embodiments of the invention are directed to a nanosheet field effect transistor (FET) having a nanosheet stack formed over a substrate. The nanosheet stack includes a plurality of channel nanosheets, wherein the plurality of channel nanosheets includes a first channel nanosheet having a first end region, a second end region, and a central region positioned between the first end region and the second end region. The first end region and the second end region include a first type of semiconductor material, wherein, when the first type of semiconductor material is at a first temperature, the first type of semiconductor material has a first diffusion coefficient for a dopant. The central region includes a second type of semiconductor material, wherein, when the second type of semiconductor material is at the first temperature, the second type of semiconductor material has a second diffusion coefficient for the dopant.
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