Invention Grant
- Patent Title: Manufacturing method of indium tin oxide
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Application No.: US17477548Application Date: 2021-09-17
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Publication No.: US11359299B2Publication Date: 2022-06-14
- Inventor: Kun-Cheng Peng , Chi-Ting Chung , Chun-Ying Lee , Ruei-You Liou , Yi-Xian Li
- Applicant: Ming Chi University of Technology
- Applicant Address: TW New Taipei
- Assignee: Ming Chi University of Technology
- Current Assignee: Ming Chi University of Technology
- Current Assignee Address: TW New Taipei
- Priority: TW109132789 20200922
- Main IPC: C25D3/66
- IPC: C25D3/66 ; C25D5/50 ; C25D5/10 ; C25D3/54 ; C25D3/32

Abstract:
The present disclosure provides a manufacturing method of indium tin oxide, including: providing a first electrolyte including choline chloride, urea, indium chloride, boric acid, and ascorbic acid; disposing a workpiece, wherein at least a part of the workpiece is in contact with the first electrolyte; heating the first electrolyte to 60° C.-95° C.; applying a first operating current to electroplate indium onto the workpiece; providing an second electrolyte including choline chloride, urea, tin chloride, boric acid, and ascorbic acid; disposing the indium-coated workpiece, wherein at least a part of the workpiece is in contact with the second electroplate; heating the second electroplate to 60° C.-95° C.; applying a second operating current to electroplate tin onto the workpiece; and annealing the indium and tin on the workpiece to form indium tin oxide in an oxygen environment.
Public/Granted literature
- US20220090285A1 MANUFACTURING METHOD OF INDIUM TIN OXIDE Public/Granted day:2022-03-24
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