公开(公告)号：US11359299B2

公开(公告)日：2022-06-14

申请号：US17477548

申请日：2021-09-17

Applicant: Ming Chi University of Technology

Inventor： Kun-Cheng Peng ,  Chi-Ting Chung ,  Chun-Ying Lee ,  Ruei-You Liou ,  Yi-Xian Li

IPC: C25D3/66 ,  C25D5/50 ,  C25D5/10 ,  C25D3/54 ,  C25D3/32

Abstract: The present disclosure provides a manufacturing method of indium tin oxide, including: providing a first electrolyte including choline chloride, urea, indium chloride, boric acid, and ascorbic acid; disposing a workpiece, wherein at least a part of the workpiece is in contact with the first electrolyte; heating the first electrolyte to 60° C.-95° C.; applying a first operating current to electroplate indium onto the workpiece; providing an second electrolyte including choline chloride, urea, tin chloride, boric acid, and ascorbic acid; disposing the indium-coated workpiece, wherein at least a part of the workpiece is in contact with the second electroplate; heating the second electroplate to 60° C.-95° C.; applying a second operating current to electroplate tin onto the workpiece; and annealing the indium and tin on the workpiece to form indium tin oxide in an oxygen environment.