- 专利标题: Light-emitting diode device
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申请号: US16878290申请日: 2020-05-19
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公开(公告)号: US11362074B2公开(公告)日: 2022-06-14
- 发明人: Shunyi Chen , Junpeng Shi , Weng-Tack Wong , Chen-ke Hsu , Chih-Wei Chao
- 申请人: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 申请人地址: CN Xiamen
- 专利权人: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人地址: CN Xiamen
- 代理机构: Thomas | Horstemeyer, LLP
- 优先权: CN201721568219.7 20171122
- 主分类号: H01L25/16
- IPC分类号: H01L25/16 ; H01L33/62 ; H01L33/60 ; H01L33/48
摘要:
A light-emitting diode (LED) device includes a substrate, an electrically conductive layer, a first LED chip, and an anti-electrostatic discharge element. The substrate has opposite upper and lower surfaces. The electrically conductive layer is formed on the upper surface of the substrate, and has first and second regions that are electrically separated from each other by a trench structure. The trench structure has a first segment and a second segment which connects and is not collinear with the first segment. The first LED chip is disposed across the first segment, and the anti-electrostatic discharge element is disposed across the second segment, both interconnecting the first and second regions.
公开/授权文献
- US20200279838A1 LIGHT-EMITTING DIODE DEVICE 公开/授权日:2020-09-03
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