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公开(公告)号：US12002796B2
公开(公告)日：2024-06-04
申请号：US17804888
申请日：2022-06-01
Inventor： Shunyi Chen , Junpeng Shi , Weng-Tack Wong , Chen-ke Hsu , Chih-Wei Chao
CPC classification number: H01L25/167 , H01L33/483 , H01L33/60 , H01L33/62
Abstract: An LED device includes a substrate, a conductive layer, an LED chip, and a discharge element. The substrate has upper and lower surfaces and four edges interconnected to one another and surrounding the upper surface. The conductive layer is formed on the upper surface, and has first and second regions electrically separated by a trench. The trench has a first segment inclined relative to each edge of the substrate by a predetermined angle ranging between 0 and 90 degrees, and a second segment connected to the first segment. The LED chip is disposed across the first segment, and the discharge element is disposed across the second segment, both interconnecting the first and second regions.
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公开(公告)号：US11217732B2
公开(公告)日：2022-01-04
申请号：US16810523
申请日：2020-03-05
Inventor： Senpeng Huang , Junpeng Shi , Weng-Tack Wong , Shunyi Chen , Zhenduan Lin , Chih-Wei Chao , Chen-Ke Hsu
Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(λ), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(λ), P(λmax) is the maximum light intensity within 380-780 nm, S(λmax) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(λ) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(λ)=P(λ)/P(λmax)−S(W)/S(λmax), −0.15
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公开(公告)号：US11462517B2
公开(公告)日：2022-10-04
申请号：US16899413
申请日：2020-06-11
Inventor： Ping Zhang , Junpeng Shi , Senpeng Huang , Zhen-duan Lin , Shunyi Chen , Chen-ke Hsu
IPC: H01L33/48 , H01L25/075 , H01L33/50
Abstract: A light-emitting diode (LED) device includes a base plate, an LED chip unit disposed on the base plate, and a light conversion layer disposed on and covering the LED chip unit. The LED chip unit includes a first chip and a second chip. The first chip emits a first excitation light having an emission peak wavelength ranging from 385 nm to 425 nm. The second chip emits a second excitation light having an emission peak wavelength greater than that of the first excitation light. The light conversion layer is configured to convert the first and second excitation lights to excited lights having different emission peak wavelengths, each of which ranges from 440 nm to 700 nm. A mixture of the excited lights is white light.
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公开(公告)号：US11362074B2
公开(公告)日：2022-06-14
申请号：US16878290
申请日：2020-05-19
Inventor： Shunyi Chen , Junpeng Shi , Weng-Tack Wong , Chen-ke Hsu , Chih-Wei Chao
Abstract: A light-emitting diode (LED) device includes a substrate, an electrically conductive layer, a first LED chip, and an anti-electrostatic discharge element. The substrate has opposite upper and lower surfaces. The electrically conductive layer is formed on the upper surface of the substrate, and has first and second regions that are electrically separated from each other by a trench structure. The trench structure has a first segment and a second segment which connects and is not collinear with the first segment. The first LED chip is disposed across the first segment, and the anti-electrostatic discharge element is disposed across the second segment, both interconnecting the first and second regions.
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