Invention Grant
- Patent Title: Word line with air-gap for non-volatile memories
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Application No.: US16024199Application Date: 2018-06-29
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Publication No.: US11362140B2Publication Date: 2022-06-14
- Inventor: Prashant Majhi , Brian Doyle , Ravi Pillarisetty , Abhishek Sharma , Elijah V. Karpov
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- Main IPC: H01L27/24
- IPC: H01L27/24 ; G11C7/18 ; G11C8/14 ; H01L27/11597 ; G11C13/00 ; G11C11/22 ; H01L45/00 ; H01L29/78
Abstract:
Integrated circuits including 3D memory structures are disclosed. Air-gaps are purposefully introduced between word lines. The word lines may be horizontal or vertical.
Public/Granted literature
- US20200006433A1 WORD LINE WITH AIR-GAP FOR NON-VOLATILE MEMORIES Public/Granted day:2020-01-02
Information query
IPC分类:
