Invention Grant
- Patent Title: Deep trench protection
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Application No.: US17065979Application Date: 2020-10-08
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Publication No.: US11373952B2Publication Date: 2022-06-28
- Inventor: Fu-Chiang Kuo , Tao-Cheng Liu , Shih-Chi Kuo , Tsung-Hsien Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/768 ; H01L21/762 ; H01L23/532 ; H01L21/78
Abstract:
A semiconductor device includes: at least one conductive feature disposed on a substrate; at least one dielectric layer overlying the substrate, a trench structure extending through the at least one dielectric layer; and a protection layer overlaying the trench structure.
Public/Granted literature
- US20210028118A1 DEEP TRENCH PROTECTION Public/Granted day:2021-01-28
Information query
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