Invention Grant
- Patent Title: Semiconductor fin cutting process and structures formed thereby
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Application No.: US17019475Application Date: 2020-09-14
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Publication No.: US11380593B2Publication Date: 2022-07-05
- Inventor: Shih-Wen Huang , Jaming Chang , Kai Hung Cheng , Chia-Hui Lin , Jei Ming Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8234 ; H01L29/06 ; H01L21/02 ; H01L21/762

Abstract:
Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.
Information query
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