公开(公告)号：US10777466B2

公开(公告)日：2020-09-15

申请号：US15922656

申请日：2018-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen Huang ,  Chia-Hui Lin ,  Jaming Chang ,  Jei Ming Chen ,  Kai Hung Cheng

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/02 ,  H01L21/762

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

公开(公告)号：US11990375B2

公开(公告)日：2024-05-21

申请号：US17852716

申请日：2022-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen Huang ,  Jaming Chang ,  Kai Hung Cheng ,  Chia-Hui Lin ,  Jei Ming Chen

IPC: H01L27/148 ,  H01L21/02 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06

CPC classification number: H01L21/823481 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/76224 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0653

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

公开(公告)号：US20200373154A1

公开(公告)日：2020-11-26

申请号：US16983187

申请日：2020-08-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Dong-Sheng Li ,  Chia-Hui Lin ,  Kai Hung Cheng ,  Yao-Hsu Sun ,  Wen-Cheng Wu ,  Bo-Cyuan Lu ,  Sung-En Lin ,  Tai-Chun Huang

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/033 ,  H01L21/28 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8238

Abstract: A four-layer photoresist and method of forming the same are disclosed. In an embodiment, a method includes forming a semiconductor fin; depositing a target layer on the semiconductor fin; depositing a BARC layer on the target layer; depositing a first mask layer over the BARC layer, the first mask layer being deposited using a plasma process with an RF power of less than 50 W; depositing a second mask layer over the first mask layer using a plasma process with an RF power of less than 500 W; depositing a photoresist layer over the second mask layer; patterning the photoresist layer, the second mask layer, the first mask layer, and the BARC layer to form a first mask; and selectively removing the target layer from a first portion of the semiconductor fin using the first mask, the target layer remaining on a second portion of the semiconductor fin.

公开(公告)号：US20240282638A1

公开(公告)日：2024-08-22

申请号：US18636384

申请日：2024-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen Huang ,  Jaming Chang ,  Kai Hung Cheng ,  Chia-Hui Lin ,  Jei Ming Chen

IPC: H01L21/8234 ,  H01L21/02 ,  H01L21/762 ,  H01L27/088 ,  H01L29/06

CPC classification number: H01L21/823481 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/76224 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0653

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

公开(公告)号：US20220328360A1

公开(公告)日：2022-10-13

申请号：US17852716

申请日：2022-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen Huang ,  Jaming Chang ,  Kai Hung Cheng ,  Chia-Hui Lin ,  Jei Ming Chen

IPC: H01L21/8234 ,  H01L29/06 ,  H01L21/02 ,  H01L21/762 ,  H01L27/088

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

公开(公告)号：US11380593B2

公开(公告)日：2022-07-05

申请号：US17019475

申请日：2020-09-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen Huang ,  Jaming Chang ,  Kai Hung Cheng ,  Chia-Hui Lin ,  Jei Ming Chen

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/02 ,  H01L21/762

Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

公开(公告)号：US11195717B2

公开(公告)日：2021-12-07

申请号：US16983187

申请日：2020-08-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Dong-Sheng Li ,  Chia-Hui Lin ,  Kai Hung Cheng ,  Yao-Hsu Sun ,  Wen-Cheng Wu ,  Bo-Cyuan Lu ,  Sung-En Lin ,  Tai-Chun Huang

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/8238 ,  G03F7/09 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26

Abstract: A four-layer photoresist and method of forming the same are disclosed. In an embodiment, a method includes forming a semiconductor fin; depositing a target layer on the semiconductor fin; depositing a BARC layer on the target layer; depositing a first mask layer over the BARC layer, the first mask layer being deposited using a plasma process with an RF power of less than 50 W; depositing a second mask layer over the first mask layer using a plasma process with an RF power of less than 500 W; depositing a photoresist layer over the second mask layer; patterning the photoresist layer, the second mask layer, the first mask layer, and the BARC layer to form a first mask; and selectively removing the target layer from a first portion of the semiconductor fin using the first mask, the target layer remaining on a second portion of the semiconductor fin.