Invention Grant
- Patent Title: Semiconductor device comprising an oxide semiconductor film
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Application No.: US16582225Application Date: 2019-09-25
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Publication No.: US11380795B2Publication Date: 2022-07-05
- Inventor: Shunpei Yamazaki , Junichi Koezuka , Masami Jintyou , Yukinori Shima , Takashi Hamochi , Yasutaka Nakazawa
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2013-271783 20131227
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L29/10 ; H01L29/45 ; G02F1/1333 ; G02F1/1335 ; G02F1/1339 ; G02F1/1368 ; H01L27/32
Abstract:
A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.
Public/Granted literature
- US20200020810A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-01-16
Information query
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