公开(公告)号：US12218144B2

公开(公告)日：2025-02-04

申请号：US18531767

申请日：2023-12-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Yasutaka Nakazawa ,  Yukinori Shima ,  Masami Jintyou ,  Masayuki Sakakura ,  Motoki Nakashima

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L29/04

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

公开(公告)号：US11710794B2

公开(公告)日：2023-07-25

申请号：US17063748

申请日：2020-10-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro Sato ,  Yasutaka Nakazawa ,  Takayuki Cho ,  Shunsuke Koshioka ,  Hajime Tokunaga ,  Masami Jintyou

IPC: H01L29/786 ,  H01L29/10 ,  H01L21/02 ,  H01L21/465 ,  H10K59/123 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L21/306 ,  H01L29/66

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F1/136277 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78693 ,  H01L29/78696 ,  H10K59/123

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US11581427B2

公开(公告)日：2023-02-14

申请号：US17254426

申请日：2019-06-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Takahiro Iguchi ,  Yasutaka Nakazawa

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/383 ,  H01L21/4757 ,  H01L29/786 ,  G02F1/1368 ,  H01L21/465 ,  H01L27/12 ,  H01L27/32 ,  H01L29/423

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor layer is formed, a gate insulating layer is formed over the semiconductor layer, a metal oxide layer is formed over the gate insulating layer, and a gate electrode which overlaps with part of the semiconductor layer is formed over the metal oxide layer. Then, a first element is supplied through the metal oxide layer and the gate insulating layer to a region of the semiconductor layer that does not overlap with the gate electrode. Examples of the first element include phosphorus, boron, magnesium, aluminum, and silicon. The metal oxide layer may be processed after the first element is supplied to the semiconductor layer.

公开(公告)号：US09954117B2

公开(公告)日：2018-04-24

申请号：US15661040

申请日：2017-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takashi Hamochi ,  Yasutaka Nakazawa ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24 ,  H01L29/417 ,  H01L27/12 ,  H01L29/45 ,  H01L27/32

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/7869 ,  H01L2029/7863

Abstract: A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations. The gate electrode, the source electrode, and the drain electrode contain the same metal element.

公开(公告)号：US09276128B2

公开(公告)日：2016-03-01

申请号：US14518362

申请日：2014-10-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka Nakazawa ,  Shunsuke Koshioka ,  Takayuki Cho ,  Takahiro Sato

IPC: H01L21/00 ,  H01L29/786 ,  H01L21/4763 ,  H01L21/3213 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  C09K13/00

CPC classification number: H01L29/7869 ,  C09K13/00 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  H01L21/32134 ,  H01L21/47635 ,  H01L23/53238 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a first conductive film over a substrate; forming an insulating film over the first conductive film; forming an oxide semiconductor film over the insulating film to overlap with the first conductive film; forming a second conductive film including a metal film containing molybdenum as its main component and a metal film containing copper as its main component over the oxide semiconductor film; and etching the second conductive film by an etchant. At the time of etching the second conductive film by the etchant, the oxide semiconductor film is used as an etching stopper film. In addition, the etchant which can be used for a transistor including the oxide semiconductor film is provided.

Abstract translation: 一种制造半导体器件的方法包括以下步骤：在衬底上形成第一导电膜; 在所述第一导电膜上形成绝缘膜; 在所述绝缘膜上形成氧化物半导体膜以与所述第一导电膜重叠; 在所述氧化物半导体膜上形成包含以钼为主要成分的金属膜和含有铜作为主要成分的金属膜的第二导电膜; 并用蚀刻剂蚀刻第二导电膜。 在通过蚀刻剂蚀刻第二导电膜时，氧化物半导体膜用作蚀刻停止膜。 此外，提供了可用于包括氧化物半导体膜的晶体管的蚀刻剂。

公开(公告)号：US12230719B2

公开(公告)日：2025-02-18

申请号：US17902010

申请日：2022-09-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Daisuke Kurosaki ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  H01L27/12

Abstract: To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. A semiconductor device includes an oxide semiconductor film, a gate electrode, an insulating film over the gate electrode, the oxide semiconductor film over the insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film, include the same element. The first oxide semiconductor film includes a region having lower crystallinity than the second oxide semiconductor film.

公开(公告)号：US12142658B2

公开(公告)日：2024-11-12

申请号：US17747063

申请日：2022-05-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka Nakazawa ,  Kenichi Okazaki ,  Takayuki Ohide ,  Rai Sato

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  G02F1/1368 ,  H10K59/121

Abstract: A semiconductor device is fabricated by a method including the following steps: a first step of forming a semiconductor film containing a metal oxide over an insulating layer; a second step of forming a conductive film over the semiconductor film; a third step of forming a first resist mask over the conductive film and etching the conductive film to form a first conductive layer and to expose a top surface of the semiconductor film that is not covered with the first conductive layer; and a fourth step of forming a second resist mask that covers a top surface and a side surface of the first conductive layer and part of the top surface of the semiconductor film and etching the semiconductor film to form a semiconductor layer and to expose a top surface of the insulating layer that is not covered with the semiconductor layer.

公开(公告)号：US11961918B2

公开(公告)日：2024-04-16

申请号：US17894197

申请日：2022-08-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasutaka Nakazawa ,  Yukinori Shima ,  Kenichi Okazaki ,  Junichi Koezuka ,  Shunpei Yamazaki

IPC: H01L29/786 ,  G09F9/30 ,  H01L21/02 ,  H01L29/51 ,  H01L29/66 ,  H05B33/10 ,  H05B33/14

CPC classification number: H01L29/7869 ,  G09F9/30 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02554 ,  H01L29/517 ,  H01L29/66742 ,  H05B33/10 ,  H05B33/14

Abstract: A semiconductor device which has favorable electrical characteristics, a method for manufacturing a semiconductor device with high productivity, and a method for manufacturing a semiconductor device with a high yield are provided. The method for manufacturing a semiconductor device includes a first step of forming a first insulating layer containing silicon and nitrogen, a second step of adding oxygen in a vicinity of a surface of the first insulating layer, a third step of forming a semiconductor layer containing a metal oxide over and in contact with the first insulating layer, a fourth step of forming a second insulating layer containing oxygen over and in contact with the semiconductor layer, a fifth step of performing plasma treatment in an atmosphere containing oxygen at a first temperature, a sixth step of performing plasma treatment in an atmosphere containing oxygen at a second temperature lower than the first temperature, and a seventh step of forming a third insulating layer containing silicon and nitrogen over the second insulating layer.

公开(公告)号：US11682733B2

公开(公告)日：2023-06-20

申请号：US17330463

申请日：2021-05-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki Oikawa ,  Nobuharu Ohsawa ,  Masami Jintyou ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/28 ,  H01L29/49 ,  H01L29/04 ,  H01L29/45

CPC classification number: H01L29/7869 ,  H01L21/28 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/04 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/78696

Abstract: The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a source electrode over the oxide semiconductor film, a drain electrode over the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a second gate electrode over the second insulating film. The first insulating film includes a first opening. A connection electrode electrically connected to the first gate electrode through the first opening is formed over the first insulating film. The second insulating film includes a second opening that reaches the connection electrode. The second gate electrode includes an oxide conductive film and a metal film over the oxide conductive film. The connection electrode and the second gate electrode are electrically connected to each other through the metal film.

公开(公告)号：US11637208B2

公开(公告)日：2023-04-25

申请号：US17262793

申请日：2019-07-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Kenichi Okazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yasutaka Nakazawa ,  Seiji Yasumoto ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L51/50 ,  H05B33/22

Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. A semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The second insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The first insulating film, the second insulating film, and the third insulating film each contain an oxide. The first insulating film includes a portion in contact with the semiconductor layer. The semiconductor layer contains indium, gallium, and oxygen and includes a region with an indium content percentage higher than a gallium content percentage.