- 专利标题： Multiplexors under an array of memory cells
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申请号： US17172163申请日： 2021-02-10
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公开(公告)号： US11386948B1公开(公告)日： 2022-07-12
- 发明人: Yuan He , Tae H. Kim
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Brooks, Cameron & Huebsch, PLLC
- 主分类号： G11C8/00
- IPC分类号： G11C8/00 ; G11C11/4091 ; G11C11/4096 ; H03K19/173 ; G11C5/06 ; G11C11/404
摘要：
A sense amplifier can be formed outside of/horizontally adjacent to an array of vertically stacked tiers of memory cells. Memory cells can be sensed via multiplexors formed under the array that can operate to couple vertical sense lines (to which the memory cells are coupled) to horizontal sense lines (to which the sense amplifier is coupled).
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