Invention Grant
- Patent Title: Multiplexors under an array of memory cells
-
Application No.: US17172163Application Date: 2021-02-10
-
Publication No.: US11386948B1Publication Date: 2022-07-12
- Inventor: Yuan He , Tae H. Kim
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C11/4091 ; G11C11/4096 ; H03K19/173 ; G11C5/06 ; G11C11/404

Abstract:
A sense amplifier can be formed outside of/horizontally adjacent to an array of vertically stacked tiers of memory cells. Memory cells can be sensed via multiplexors formed under the array that can operate to couple vertical sense lines (to which the memory cells are coupled) to horizontal sense lines (to which the sense amplifier is coupled).
Information query