- 专利标题： Silicon mandrel etch after native oxide punch-through
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申请号： US16716585申请日： 2019-12-17
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公开(公告)号： US11387115B2公开(公告)日： 2022-07-12
- 发明人: Chun Yan , Tsai Wen Sung , Sio On Lo , Hua Chung , Michael X. Yang
- 申请人： Mattson Technology, Inc. , Beijing E-Town Semiconductor Technology, Co., LTD
- 申请人地址： US CA Fremont; CN Beijing
- 专利权人： Mattson Technology, Inc.,Beijing E-Town Semiconductor Technology, Co., LTD
- 当前专利权人： Mattson Technology, Inc.,Beijing E-Town Semiconductor Technology, Co., LTD
- 当前专利权人地址： US CA Fremont; CN Beijing
- 代理机构： Dority & Manning, P.A.
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01L21/3213 ; H01L21/02 ; H01L21/033 ; H01L29/66 ; H01L21/67 ; H01J37/32 ; H01L21/28
摘要：
Apparatus, systems, and methods for conducting a silicon containing material removal process on a workpiece are provided. In one example implementation, the method can include generating species from a process gas in a first chamber using an inductive coupling element. The method can include introducing a fluorine containing gas with the species to create a mixture. The mixture can include exposing a silicon structure of the workpiece to the mixture to remove at least a portion of the silicon structure.
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