Invention Grant
- Patent Title: Silicon mandrel etch after native oxide punch-through
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Application No.: US16716585Application Date: 2019-12-17
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Publication No.: US11387115B2Publication Date: 2022-07-12
- Inventor: Chun Yan , Tsai Wen Sung , Sio On Lo , Hua Chung , Michael X. Yang
- Applicant: Mattson Technology, Inc. , Beijing E-Town Semiconductor Technology, Co., LTD
- Applicant Address: US CA Fremont; CN Beijing
- Assignee: Mattson Technology, Inc.,Beijing E-Town Semiconductor Technology, Co., LTD
- Current Assignee: Mattson Technology, Inc.,Beijing E-Town Semiconductor Technology, Co., LTD
- Current Assignee Address: US CA Fremont; CN Beijing
- Agency: Dority & Manning, P.A.
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/3213 ; H01L21/02 ; H01L21/033 ; H01L29/66 ; H01L21/67 ; H01J37/32 ; H01L21/28
Abstract:
Apparatus, systems, and methods for conducting a silicon containing material removal process on a workpiece are provided. In one example implementation, the method can include generating species from a process gas in a first chamber using an inductive coupling element. The method can include introducing a fluorine containing gas with the species to create a mixture. The mixture can include exposing a silicon structure of the workpiece to the mixture to remove at least a portion of the silicon structure.
Information query
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