- 专利标题： Methods of determining scattering of radiation by structures of finite thicknesses on a patterning device
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申请号： US17326481申请日： 2021-05-21
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公开(公告)号： US11409203B2公开(公告)日： 2022-08-09
- 发明人: Yu Cao , Yen-Wen Lu , Peng Liu , Rafael C. Howell , Roshni Biswas
- 申请人： ASML NETHERLANDS B.V.
- 申请人地址： NL Veldhoven
- 专利权人： ASML NETHERLANDS B.V.
- 当前专利权人： ASML NETHERLANDS B.V.
- 当前专利权人地址： NL Veldhoven
- 代理机构： Pillsbury Winthrop Shaw Pittman LLP
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F1/36
摘要：
A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.
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