公开(公告)号：US11016395B2

公开(公告)日：2021-05-25

申请号：US16467124

申请日：2017-12-06

申请人： ASML NETHERLANDS B.V.

发明人： Yu Cao ,  Yen-Wen Lu ,  Peng Liu ,  Rafael C. Howell ,  Roshni Biswas

IPC分类号： G03F7/20 ,  G03F1/36

摘要： A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function represents a continuous transmission mask and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

公开(公告)号：US11789371B2

公开(公告)日：2023-10-17

申请号：US17882389

申请日：2022-08-05

申请人： ASML NETHERLANDS B.V.

发明人： Yu Cao ,  Yen-Wen Lu ,  Peng Liu ,  Rafael C. Howell ,  Roshni Biswas

IPC分类号： G03F7/20 ,  G03F1/36 ,  G03F7/00

CPC分类号： G03F7/705 ,  G03F7/70283 ,  G03F7/70866 ,  G03F1/36

摘要： A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

公开(公告)号：US11409203B2

公开(公告)日：2022-08-09

申请号：US17326481

申请日：2021-05-21

申请人： ASML NETHERLANDS B.V.

发明人： Yu Cao ,  Yen-Wen Lu ,  Peng Liu ,  Rafael C. Howell ,  Roshni Biswas

IPC分类号： G03F7/20 ,  G03F1/36

摘要： A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

公开(公告)号：US11580289B2

公开(公告)日：2023-02-14

申请号：US17297801

申请日：2019-10-29

申请人： ASML NETHERLANDS B.V.

发明人： Roshni Biswas ,  Rafael C. Howell ,  Cuiping Zhang ,  Ningning Jia ,  Jingjing Liu ,  Quan Zhang

IPC分类号： G06F30/30 ,  G03F7/20 ,  G06F30/398 ,  G06F30/392 ,  G06F119/18

摘要： A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.

公开(公告)号：US11972194B2

公开(公告)日：2024-04-30

申请号：US18089848

申请日：2022-12-28

申请人： ASML NETHERLANDS B.V.

发明人： Roshni Biswas ,  Rafael C. Howell ,  Cuiping Zhang ,  Ningning Jia ,  Jingjing Liu ,  Quan Zhang

IPC分类号： G06F30/30 ,  G03F7/00 ,  G03F7/20 ,  G06F30/392 ,  G06F30/398 ,  G06F119/18

CPC分类号： G06F30/398 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70625 ,  G06F30/392 ,  G06F2119/18

摘要： A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.