Invention Grant
- Patent Title: Methods of determining scattering of radiation by structures of finite thicknesses on a patterning device
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Application No.: US17326481Application Date: 2021-05-21
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Publication No.: US11409203B2Publication Date: 2022-08-09
- Inventor: Yu Cao , Yen-Wen Lu , Peng Liu , Rafael C. Howell , Roshni Biswas
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML NETHERLANDS B.V.
- Current Assignee: ASML NETHERLANDS B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F1/36
Abstract:
A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.
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