Invention Grant
- Patent Title: Method of cutting conductive patterns
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Application No.: US16683150Application Date: 2019-11-13
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Publication No.: US11429028B2Publication Date: 2022-08-30
- Inventor: Chin-Hsiung Hsu , Huang-Yu Chen , Tsong-Hua Ou , Wen-Hao Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H05K3/06
- IPC: H05K3/06 ; G03F7/20 ; H05K3/00 ; G06F30/39 ; G03F1/70 ; H01L21/3213

Abstract:
A method includes: providing a first layout of a first layer over a substrate, the first layer having at least one metal pattern, and generating a second layout by placing a cut mask at a first position relative to the substrate to remove material from a first region of the at least one metal pattern to provide a first metal pattern and placing the cut mask at a second position relative to the first layer over the substrate to remove material from a second region of the at least one metal pattern to provide a second metal pattern.
Public/Granted literature
- US20200081348A1 METHOD OF CUTTING CONDUCTIVE PATTERNS Public/Granted day:2020-03-12
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