Invention Grant
- Patent Title: Resistive random access memory device with switching multi-layer stack and methods of fabrication
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Application No.: US16641588Application Date: 2017-09-28
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Publication No.: US11430948B2Publication Date: 2022-08-30
- Inventor: Timothy Glassman , Dragos Seghete , Nathan Strutt , Namrata S. Asuri , Oleg Golonzka , Hiten Kothari , Matthew J. Andrus
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Finch & Maloney PLLC
- International Application: PCT/US2017/053970 WO 20170928
- International Announcement: WO2019/066849 WO 20190404
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
A memory device includes a bottom electrode above a substrate, a first switching layer on the bottom electrode, a second switching layer including aluminum on the first switching layer, an oxygen exchange layer on the second switching layer and a top electrode on the oxygen exchange layer. The presence of the second switching layer including aluminum on the first switching layer enables a reduction in electro-forming voltage of the memory device.
Information query
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