公开(公告)号：US11251076B2

公开(公告)日：2022-02-15

申请号：US16940004

申请日：2020-07-27

Applicant: Intel Corporation

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/76 ,  H01L23/52 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US10438844B2

公开(公告)日：2019-10-08

申请号：US15926870

申请日：2018-03-20

Applicant: Intel Corporation

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/76 ,  H01L23/52 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US09754821B2

公开(公告)日：2017-09-05

申请号：US15141522

申请日：2016-04-28

Applicant: INTEL CORPORATION

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/47 ,  H01L21/82 ,  H01L21/768 ,  H01L21/02 ,  H01L23/522 ,  H01L23/532 ,  H01L23/00

CPC classification number: H01L21/76831 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US12040226B2

公开(公告)日：2024-07-16

申请号：US18137334

申请日：2023-04-20

Applicant: Intel Corporation

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/76 ,  H01L21/02 ,  H01L21/768 ,  H01L23/00 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76831 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US11670545B2

公开(公告)日：2023-06-06

申请号：US17855656

申请日：2022-06-30

Applicant: Intel Corporation

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/76 ,  H01L23/52 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/00

CPC classification number: H01L21/76831 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02178 ,  H01L21/7682 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US10763161B2

公开(公告)日：2020-09-01

申请号：US16702233

申请日：2019-12-03

Applicant: Intel Corporation

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/76 ,  H01L23/52 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US11587827B2

公开(公告)日：2023-02-21

申请号：US17567762

申请日：2022-01-03

Applicant: Intel Corporation

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/76 ,  H01L23/52 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US11430948B2

公开(公告)日：2022-08-30

申请号：US16641588

申请日：2017-09-28

Applicant: INTEL CORPORATION

Inventor： Timothy Glassman ,  Dragos Seghete ,  Nathan Strutt ,  Namrata S. Asuri ,  Oleg Golonzka ,  Hiten Kothari ,  Matthew J. Andrus

IPC: H01L45/00 ,  H01L27/24

Abstract: A memory device includes a bottom electrode above a substrate, a first switching layer on the bottom electrode, a second switching layer including aluminum on the first switching layer, an oxygen exchange layer on the second switching layer and a top electrode on the oxygen exchange layer. The presence of the second switching layer including aluminum on the first switching layer enables a reduction in electro-forming voltage of the memory device.

公开(公告)号：US10529619B2

公开(公告)日：2020-01-07

申请号：US16538666

申请日：2019-08-12

Applicant: Intel Corporation

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/76 ,  H01L23/52 ,  H01L21/02 ,  H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L23/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US09935002B2

公开(公告)日：2018-04-03

申请号：US15686047

申请日：2017-08-24

Applicant: Intel Corporation

Inventor： Sean King ,  Hui Jae Yoo ,  Sreenivas Kosaraju ,  Timothy Glassman

IPC: H01L21/47 ,  H01L21/76 ,  H01L21/02 ,  H01L21/768 ,  H01L23/00 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76831 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.