Invention Grant
- Patent Title: Seamless gap fill
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Application No.: US16867092Application Date: 2020-05-05
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Publication No.: US11437271B2Publication Date: 2022-09-06
- Inventor: Yixiong Yang , Srinivas Gandikota , Wei Liu
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/321

Abstract:
Methods for filling a substrate feature with a seamless gap fill are described. Methods comprise forming a metal film a substrate surface, the sidewalls and the bottom surface of a feature, the metal film having a void located within the width of the feature; treating the metal film with a plasma; and annealing the metal film to remove the void.
Public/Granted literature
- US20210351074A1 SEAMLESS GAP FILL Public/Granted day:2021-11-11
Information query
IPC分类: