- 专利标题: Apparatus for manufacturing semiconductor device and method of manufacturing semiconductor device
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申请号: US16406062申请日: 2019-05-08
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公开(公告)号: US11447871B2公开(公告)日: 2022-09-20
- 发明人: Shotaro Nakamura
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Studebaker & Brackett PC
- 优先权: JPJP2018-101202 20180528
- 主分类号: C23C18/16
- IPC分类号: C23C18/16 ; H01L21/02 ; B05C11/10 ; B05C3/02 ; H01L21/67 ; C25D5/08 ; H01L21/288 ; C23C18/18
摘要:
There is provided a technique capable of forming a plating film excellent in film thickness and quality uniformity on a to-be-plated surface of a semiconductor wafer while suppressing an increase in costs of facilities. An apparatus for manufacturing a semiconductor device includes: a reaction bath; a supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe; and an outer bath serving as a reservoir bath provided adjacent to the reaction bath on a first end side of the supply pipe and storing therein the reaction solution overflowed the reaction bath. The aperture ratio of part of the ejection holes more distant from the outer bath is at least partially higher than that of part of the ejection holes closer to the outer bath.