Invention Grant
- Patent Title: Etching method and etching apparatus
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Application No.: US16979063Application Date: 2019-07-09
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Publication No.: US11462407B2Publication Date: 2022-10-04
- Inventor: Yusuke Yanagisawa , Yusuke Takino
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Weihrouch IP
- Priority: JPJP2018-137841 20180723
- International Application: PCT/JP2019/027078 WO 20190709
- International Announcement: WO2020/022045 WO 20200130
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/67 ; H01L21/311 ; H01L21/3213
Abstract:
An etching method includes: forming a second film on a workpiece target including a processing target film, a layer including a plurality of convex portions formed on the processing target film, and a first film that covers the plurality of convex portions and the processing target film exposed between the plurality of convex portions; etching the second film in a state where the second film remains on a portion of the first film that covers a side surface of each of the plurality of convex portions; and etching the first film in a state where the second film remains on the portion of the first film that covers the side surface of each of the plurality of convex portions, thereby exposing a top portion of each of the plurality of convex portions and the processing target film between the plurality of convex portions.
Public/Granted literature
- US20210057220A1 ETCHING METHOD AND ETCHING APPARATUS Public/Granted day:2021-02-25
Information query
IPC分类:
