Invention Grant
- Patent Title: Opening in the pad for bonding integrated passive device in InFO package
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Application No.: US17188534Application Date: 2021-03-01
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Publication No.: US11470720B2Publication Date: 2022-10-11
- Inventor: Cheng-Hsien Hsieh , Chi-Hsi Wu , Chen-Hua Yu , Der-Chyang Yeh , Hsien-Wei Chen , Li-Han Hsu , Wei-Cheng Wu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H05K1/11
- IPC: H05K1/11 ; H01L23/00 ; H05K1/18 ; H05K1/02

Abstract:
A package includes a conductive pad, with a plurality of openings penetrating through the conductive pad. A dielectric layer encircles the conductive pad. The dielectric layer has portions filling the plurality of openings. An Under-Bump Metallurgy (UBM) includes a via portion extending into the dielectric layer to contact the conductive pad. A solder region is overlying and contacting the UBM. An integrated passive device is bonded to the UBM through the solder region.
Public/Granted literature
- US20210185810A1 Opening in the Pad for Bonding Integrated Passive Device in InFO Package Public/Granted day:2021-06-17
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