公开(公告)号：US20240290755A1

公开(公告)日：2024-08-29

申请号：US18654794

申请日：2024-05-03

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsien-Wei Chen ,  Shin-Puu Jeng

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L23/48 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/16 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/16227 ,  H01L2225/06517

摘要： Three dimensional structures and methods are provided in which capacitors are formed separately from a first semiconductor device and then connected to the first semiconductor device. For example, a capacitor chip is provided and then bonded to a first semiconductor die. The capacitor chip and the first semiconductor die are encapsulated with a first encapsulant, and one of the capacitor chips and the first semiconductor die are thinned to expose through vias.

公开(公告)号：US11996401B2

公开(公告)日：2024-05-28

申请号：US18302063

申请日：2023-04-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsien-Wei Chen ,  Jie Chen

IPC分类号： H01L25/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065 ,  H01L25/10 ,  H01L25/18 ,  H01L21/304

CPC分类号： H01L25/50 ,  H01L21/4846 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3107 ,  H01L23/49811 ,  H01L24/02 ,  H01L24/03 ,  H01L24/09 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L24/96 ,  H01L25/065 ,  H01L25/0657 ,  H01L25/10 ,  H01L25/105 ,  H01L25/18 ,  H01L21/304 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/48 ,  H01L2221/68304 ,  H01L2221/68327 ,  H01L2221/68345 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/02331 ,  H01L2224/02373 ,  H01L2224/03003 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/06181 ,  H01L2224/0905 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/12105 ,  H01L2224/13008 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13181 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13311 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/2518 ,  H01L2224/451 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/81005 ,  H01L2224/81024 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81411 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2224/81895 ,  H01L2224/92 ,  H01L2224/96 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2224/45144 ,  H01L2924/00 ,  H01L2224/96 ,  H01L2224/81 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2224/81447 ,  H01L2924/00014 ,  H01L2224/81411 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/13166 ,  H01L2924/01029 ,  H01L2224/13181 ,  H01L2924/01029 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2224/13144 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/0105 ,  H01L2224/13139 ,  H01L2924/00014 ,  H01L2224/13164 ,  H01L2924/00014 ,  H01L2224/13109 ,  H01L2924/00014 ,  H01L2224/11462 ,  H01L2924/00014 ,  H01L2224/11452 ,  H01L2924/00014 ,  H01L2224/1145 ,  H01L2924/00014 ,  H01L2224/1132 ,  H01L2924/00014 ,  H01L2224/13294 ,  H01L2924/00014 ,  H01L2224/133 ,  H01L2924/014 ,  H01L2224/13311 ,  H01L2924/01047 ,  H01L2224/92 ,  H01L2221/68304 ,  H01L2224/03003 ,  H01L21/568 ,  H01L21/304 ,  H01L24/81 ,  H01L2221/68381 ,  H01L24/81 ,  H01L2224/92 ,  H01L2221/68304 ,  H01L2224/03 ,  H01L21/568 ,  H01L21/304 ,  H01L24/81 ,  H01L2221/68381 ,  H01L24/81 ,  H01L2224/05147 ,  H01L2924/00014 ,  H01L2224/05155 ,  H01L2924/00014 ,  H01L2224/05144 ,  H01L2924/00014 ,  H01L2224/05684 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05171 ,  H01L2924/01029 ,  H01L2224/05166 ,  H01L2924/01074 ,  H01L2224/05082 ,  H01L2224/05655 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05083 ,  H01L2224/05644 ,  H01L2224/05147 ,  H01L2224/05171 ,  H01L2924/01029 ,  H01L2224/05171 ,  H01L2224/05082 ,  H01L2224/05647 ,  H01L2224/05166 ,  H01L2924/01074 ,  H01L2224/05166 ,  H01L2224/05082 ,  H01L2224/05644 ,  H01L2224/05155 ,  H01L2224/05147 ,  H01L2224/45144 ,  H01L2924/00011 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45147 ,  H01L2924/00014 ,  H01L2224/45144 ,  H01L2924/00014 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Embodiments of the present disclosure include semiconductor packages and methods of forming the same. An embodiment is a semiconductor package including a first package including one or more dies, and a redistribution layer coupled to the one or more dies at a first side of the first package with a first set of bonding joints. The redistribution layer including more than one metal layer disposed in more than one passivation layer, the first set of bonding joints being directly coupled to at least one of the one or more metal layers, and a first set of connectors coupled to a second side of the redistribution layer, the second side being opposite the first side.

公开(公告)号：US11984405B2

公开(公告)日：2024-05-14

申请号：US17813102

申请日：2022-07-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Hua Yu ,  Shin-Puu Jeng ,  Der-Chyang Yeh ,  Hsien-Wei Chen

IPC分类号： H01L23/538 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L25/10

CPC分类号： H01L23/5386 ,  H01L23/3114 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/17 ,  H01L25/105 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/06051 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/06179 ,  H01L2224/13147 ,  H01L2224/16052 ,  H01L2224/16055 ,  H01L2224/16227 ,  H01L2224/17051 ,  H01L2224/17135 ,  H01L2224/17136 ,  H01L2224/17179 ,  H01L2224/48227 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/10162 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2224/05552 ,  H01L2924/00012 ,  H01L2224/16052 ,  H01L2924/00012 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/207

摘要： A package includes a corner, a device die, a plurality of redistribution lines underlying the device die, and a plurality of non-solder electrical connectors underlying and electrically coupled to the plurality of redistribution lines. The plurality of non-solder electrical connectors includes a corner electrical connector. The corner electrical connector is elongated. An electrical connector is farther away from the corner than the corner electrical connector, wherein the electrical connector is non-elongated.

公开(公告)号：US11955433B2

公开(公告)日：2024-04-09

申请号：US17813896

申请日：2022-07-20

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ming-Fa Chen ,  Sung-Feng Yeh ,  Hsien-Wei Chen

IPC分类号： H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L25/00 ,  H01L25/10

CPC分类号： H01L23/5389 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5386 ,  H01L24/08 ,  H01L24/80 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/1035 ,  H01L2225/1058

摘要： A package includes a redistribution structure, a die package on a first side of the redistribution structure including a first die connected to a second die by metal-to-metal bonding and dielectric-to-dielectric bonding, a dielectric material over the first die and the second die and surrounding the first die, and a first through via extending through the dielectric material and connected to the first die and a first via of the redistribution structure, a semiconductor device on the first side of the redistribution structure includes a conductive connector, wherein a second via of the redistribution structure contacts the conductive connector of the semiconductor device, a first molding material on the redistribution structure and surrounding the die package and the semiconductor device, and a package through via extending through the first molding material to contact a third via of the redistribution structure.

公开(公告)号：US20240088122A1

公开(公告)日：2024-03-14

申请号：US18517330

申请日：2023-11-22

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jie Chen ,  Hsien-Wei Chen ,  Ming-Fa Chen ,  Chen-Hua Yu

IPC分类号： H01L25/00 ,  H01L21/48 ,  H01L21/56 ,  H01L25/065 ,  H01L25/10 ,  H01L25/18

CPC分类号： H01L25/50 ,  H01L21/481 ,  H01L21/4853 ,  H01L21/56 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/18 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058

摘要： A method of forming a package includes bonding a device die to an interposer wafer, with the interposer wafer including metal lines and vias, forming a dielectric region to encircle the device die, and forming a through-via to penetrate through the dielectric region. The through-via is electrically connected to the device die through the metal lines and the vias in the interposer wafer. The method further includes forming a polymer layer over the dielectric region, and forming an electrical connector. The electrical connector is electrically coupled to the through-via through a conductive feature in the polymer layer. The interposer wafer is sawed to separate the package from other packages.

公开(公告)号：US20240079356A1

公开(公告)日：2024-03-07

申请号：US18151623

申请日：2023-01-09

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsien-Wei Chen ,  Chieh-Lung Lai ,  Meng-Liang Lin ,  Chun-Yueh Yang ,  Shin-Puu Jeng

IPC分类号： H01L23/66 ,  H01L21/48 ,  H01L23/00 ,  H01L23/498 ,  H01L23/552 ,  H10B80/00

CPC分类号： H01L23/66 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/552 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H10B80/00 ,  H01L2223/6616 ,  H01L2223/6672 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/95001 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/15174 ,  H01L2924/15311

摘要： An integrated circuit package includes an interposer, the interposer including: a first redistribution layer, a second redistribution layer over the first redistribution layer in a central region of the interposer, a dielectric layer over the first redistribution layer in a periphery of the interposer, the dielectric layer surrounding the second redistribution layer in a top-down view, a third redistribution layer over the second redistribution layer and the dielectric layer, and a first direct via extending through the dielectric layer. A conductive feature of the third redistribution layer is coupled to a conductive feature of the first redistribution layer through the first direct via.

公开(公告)号：US11862590B2

公开(公告)日：2024-01-02

申请号：US17361924

申请日：2021-06-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsien-Wei Chen ,  Ming-Fa Chen ,  Ying-Ju Chen

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L25/18 ,  H01L21/56 ,  H01L25/00

CPC分类号： H01L24/08 ,  H01L21/565 ,  H01L24/80 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2924/1431 ,  H01L2924/1434

摘要： A semiconductor package includes a redistribution structure, a first device and a second device attached to the redistribution structure, the first device including: a first die, a support substrate bonded to a first surface of the first die, and a second die bonded to a second surface of the first die opposite the first surface, where a total height of the first die and the second die is less than a first height of the second device, and where a top surface of the substrate is at least as high as a top surface of the second device, and an encapsulant over the redistribution structure and surrounding the first device and the second device.

公开(公告)号：US11855063B2

公开(公告)日：2023-12-26

申请号：US17181720

申请日：2021-02-22

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jie Chen ,  Hsien-Wei Chen ,  Ming-Fa Chen ,  Chen-Hua Yu

IPC分类号： H01L25/00 ,  H01L25/065 ,  H01L25/10 ,  H01L25/18 ,  H01L21/48 ,  H01L21/56

CPC分类号： H01L25/50 ,  H01L21/481 ,  H01L21/4853 ,  H01L21/56 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/18 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058

摘要： A method of forming a package includes bonding a device die to an interposer wafer, with the interposer wafer including metal lines and vias, forming a dielectric region to encircle the device die, and forming a through-via to penetrate through the dielectric region. The through-via is electrically connected to the device die through the metal lines and the vias in the interposer wafer. The method further includes forming a polymer layer over the dielectric region, and forming an electrical connector. The electrical connector is electrically coupled to the through-via through a conductive feature in the polymer layer. The interposer wafer is sawed to separate the package from other packages.

公开(公告)号：US11854921B2

公开(公告)日：2023-12-26

申请号：US17872916

申请日：2022-07-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Hua Yu ,  Sung-Feng Yeh ,  Ming-Fa Chen ,  Hsien-Wei Chen ,  Tzuan-Horng Liu

IPC分类号： H01L23/495 ,  H01L23/31 ,  H01L23/48 ,  H01L23/522 ,  H01L23/538

CPC分类号： H01L23/3107 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/5384

摘要： A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.

公开(公告)号：US20230395581A1

公开(公告)日：2023-12-07

申请号：US17830187

申请日：2022-06-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsien-Wei Chen ,  Meng-Liang Lin ,  Shin-Puu Jeng

IPC分类号： H01L25/16 ,  H01L21/48 ,  H01L23/498 ,  H01L23/48

CPC分类号： H01L25/162 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/481 ,  H01L24/73

摘要： A package is provided in accordance with some embodiments. The package includes a substrate including a first conductive via embedded in a first substrate core; a conductive pattern disposed on the first substrate core, wherein the conductive pattern includes a first conductive pad and a second conductive pad; a second substrate core disposed on the first substrate core and the conductive pattern; and a second conductive via disposed in the second substrate core and on the second conductive pad. The package also includes an encapsulant embedded in the second substrate core and in physical contact with the first conductive pad; a first die, including die connectors, embedded in the encapsulant and disposed on the first conductive pad; a redistribution structure disposed on the second conductive via, the die connectors and the encapsulant; and a second die disposed on the redistribution structure.