Invention Grant
- Patent Title: Method for particle removal from wafers through plasma modification in pulsed PVD
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Application No.: US16787569Application Date: 2020-02-11
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Publication No.: US11473189B2Publication Date: 2022-10-18
- Inventor: Halbert Chong , Lei Zhou , Adolph Miller Allen , Vaibhav Soni , Kishor Kalathiparambil , Vanessa Faune , Song-Moon Suh
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C14/54
- IPC: C23C14/54 ; H01J37/34 ; C23C14/35 ; C23C14/06
Abstract:
Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
Public/Granted literature
- US20200255938A1 Method For Particle Removal From Wafers Through Plasma Modification In Pulsed PVD Public/Granted day:2020-08-13
Information query
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