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公开(公告)号：US11289312B2
公开(公告)日：2022-03-29
申请号：US16438560
申请日：2019-06-12
发明人： Adolph M. Allen , Vanessa Faune , Zhong Qiang Hua , Kirankumar Neelasandra Savandaiah , Anantha K. Subramani , Philip A. Kraus , Tza-Jing Gung , Lei Zhou , Halbert Chong , Vaibhav Soni , Kishor Kalathiparambil
IPC分类号： H01J37/32 , H01J37/34 , C23C16/455 , C23C14/54
摘要： Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments a process kit configured for use in a process chamber for processing a substrate includes a shield having a cylindrical body having an upper portion and a lower portion; an adapter section configured to be supported on walls of the process chamber and having a resting surface to support the shield; and a heater coupled to the adapter section and configured to be electrically coupled to at least one power source of the processes chamber to heat the shield.
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公开(公告)号：US11049701B2
公开(公告)日：2021-06-29
申请号：US15823176
申请日：2017-11-27
发明人： Adolph Miller Allen , William Johanson , Viachslav Babayan , Zhong Qiang Hua , Carl R. Johnson , Vanessa Faune , Jingjing Liu , Vaibhav Soni , Kirankumar Savandaiah , Sundarapandian Ramalinga Vijayalaks Reddy
IPC分类号： H01J37/34 , H01J37/32 , C23C14/34 , C23C16/458 , H01J37/02
摘要： Apparatus and methods for reducing and eliminating accumulation of excessive charged particles from substrate processing systems are provided herein. In some embodiments a process kit for a substrate process chamber includes: a cover ring having a body and a lip extending radially inward from the body, wherein the body has a bottom, a first wall, and a second wall, and wherein a first channel is formed between the second wall and the lip; a grounded shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first channel of the cover ring; and a bias power receiver coupled to the body and extending through an opening in the grounded shield.
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公开(公告)号：US11473189B2
公开(公告)日：2022-10-18
申请号：US16787569
申请日：2020-02-11
发明人： Halbert Chong , Lei Zhou , Adolph Miller Allen , Vaibhav Soni , Kishor Kalathiparambil , Vanessa Faune , Song-Moon Suh
摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
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公开(公告)号：US11932934B2
公开(公告)日：2024-03-19
申请号：US17941137
申请日：2022-09-09
发明人： Halbert Chong , Lei Zhou , Adolph Miller Allen , Vaibhav Soni , Kishor Kalathiparambil , Vanessa Faune , Song-Moon Suh
CPC分类号： C23C14/54 , C23C14/0605 , C23C14/35 , H01J37/3405 , H01J37/3426 , H01J37/3467 , H01J37/3455 , H01J2237/002 , H01J2237/332
摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
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公开(公告)号：US20230002885A1
公开(公告)日：2023-01-05
申请号：US17941137
申请日：2022-09-09
发明人： Halbert Chong , Lei Zhou , Adolph Miller Allen , Vaibhav Soni , Kishor Kalathiparambil , Vanessa Faune , Song-Moon Suh
摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
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公开(公告)号：US20200255938A1
公开(公告)日：2020-08-13
申请号：US16787569
申请日：2020-02-11
发明人： Halbert Chong , Lei Zhou , Adolph Miller Allen , Vaibhav Soni , Kishor Kalathiparambil , Vanessa Faune , Song-Moon Suh
摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
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