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公开(公告)号：US11289312B2
公开(公告)日：2022-03-29
申请号：US16438560
申请日：2019-06-12
Applicant: APPLIED MATERIALS, INC.
Inventor： Adolph M. Allen , Vanessa Faune , Zhong Qiang Hua , Kirankumar Neelasandra Savandaiah , Anantha K. Subramani , Philip A. Kraus , Tza-Jing Gung , Lei Zhou , Halbert Chong , Vaibhav Soni , Kishor Kalathiparambil
IPC: H01J37/32 , H01J37/34 , C23C16/455 , C23C14/54
Abstract: Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments a process kit configured for use in a process chamber for processing a substrate includes a shield having a cylindrical body having an upper portion and a lower portion; an adapter section configured to be supported on walls of the process chamber and having a resting surface to support the shield; and a heater coupled to the adapter section and configured to be electrically coupled to at least one power source of the processes chamber to heat the shield.
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公开(公告)号：US11935732B2
公开(公告)日：2024-03-19
申请号：US16251716
申请日：2019-01-18
Applicant: APPLIED MATERIALS, INC.
Inventor： Adolph M. Allen , Kirankumar Neelasandra Savandaiah , Randal D. Schmieding , Vanessa Faune
CPC classification number: H01J37/3441 , C23C14/34 , C23C14/564 , H01J37/32651 , H01J2237/332
Abstract: A process kit comprises a shield and ring assembly for positioning about a substrate support in a processing chamber to reduce deposition of process deposits on internal chamber components and an overhang edge of the substrate. The shield comprises a cylindrical band having a top wall configured to surround a sputtering target and a sloped portion of a bottom wall having a substantially straight profile with gas conductance holes configured to surround the substrate support. The ring assembly comprises a cover ring having a bulb-shaped protuberance about the periphery of the ring. The bulb-shaped protuberance of the cover ring is able to block a line-of-sight between the gas conductance holes on the shield and an entrance to a chamber body cavity in the processing chamber.
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公开(公告)号：US11473189B2
公开(公告)日：2022-10-18
申请号：US16787569
申请日：2020-02-11
Applicant: Applied Materials, Inc.
Inventor： Halbert Chong , Lei Zhou , Adolph Miller Allen , Vaibhav Soni , Kishor Kalathiparambil , Vanessa Faune , Song-Moon Suh
Abstract: Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
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Patent Agency Ranking
公开(公告)号：US11049701B2
公开(公告)日：2021-06-29
申请号：US15823176
申请日：2017-11-27
Applicant: APPLIED MATERIALS, INC.
Inventor： Adolph Miller Allen , William Johanson , Viachslav Babayan , Zhong Qiang Hua , Carl R. Johnson , Vanessa Faune , Jingjing Liu , Vaibhav Soni , Kirankumar Savandaiah , Sundarapandian Ramalinga Vijayalaks Reddy
IPC: H01J37/34 , H01J37/32 , C23C14/34 , C23C16/458 , H01J37/02
Abstract: Apparatus and methods for reducing and eliminating accumulation of excessive charged particles from substrate processing systems are provided herein. In some embodiments a process kit for a substrate process chamber includes: a cover ring having a body and a lip extending radially inward from the body, wherein the body has a bottom, a first wall, and a second wall, and wherein a first channel is formed between the second wall and the lip; a grounded shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first channel of the cover ring; and a bias power receiver coupled to the body and extending through an opening in the grounded shield.
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公开(公告)号：US11024490B2
公开(公告)日：2021-06-01
申请号：US16213805
申请日：2018-12-07
Applicant: APPLIED MATERIALS, INC.
Abstract: Embodiments of magnetron assemblies and processing systems incorporating same are provided herein. In some embodiments, a magnetron assembly includes a rotatable magnet assembly coupled to a bottom of the body and having a plurality of magnets spaced apart from each other; and an encapsulating body disposed in a space between the plurality of magnets. In some embodiments, the magnetron assembly further includes a body extending along a central axis of the magnetron assembly and having a coolant feedthrough channel to provide a coolant to an area beneath the body.
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公开(公告)号：US11932934B2
公开(公告)日：2024-03-19
申请号：US17941137
申请日：2022-09-09
Applicant: Applied Materials, Inc.
Inventor： Halbert Chong , Lei Zhou , Adolph Miller Allen , Vaibhav Soni , Kishor Kalathiparambil , Vanessa Faune , Song-Moon Suh
CPC classification number: C23C14/54 , C23C14/0605 , C23C14/35 , H01J37/3405 , H01J37/3426 , H01J37/3467 , H01J37/3455 , H01J2237/002 , H01J2237/332
Abstract: Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
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公开(公告)号：US20230002885A1
公开(公告)日：2023-01-05
申请号：US17941137
申请日：2022-09-09
Applicant: Applied Materials, Inc.
Inventor： Halbert Chong , Lei Zhou , Adolph Miller Allen , Vaibhav Soni , Kishor Kalathiparambil , Vanessa Faune , Song-Moon Suh
Abstract: Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
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公开(公告)号：US20200255938A1
公开(公告)日：2020-08-13
申请号：US16787569
申请日：2020-02-11
Applicant: Applied Materials, Inc.
Inventor： Halbert Chong , Lei Zhou , Adolph Miller Allen , Vaibhav Soni , Kishor Kalathiparambil , Vanessa Faune , Song-Moon Suh
Abstract: Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
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