Invention Grant
- Patent Title: Semiconductor device having microelectromechanical systems devices with improved cavity pressure uniformity
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Application No.: US15930570Application Date: 2020-05-13
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Publication No.: US11491510B2Publication Date: 2022-11-08
- Inventor: I-Hsuan Chiu , Chia-Ming Hung , Li-Chun Peng , Hsiang-Fu Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B06B1/02 ; B81B3/00 ; B81C1/00

Abstract:
Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A plurality of cavities are disposed in the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, where the MEMS substrate comprises a plurality of movable membranes, and where the movable membranes overlie the cavities, respectively. A plurality of fluid communication channels are disposed in the dielectric structure, where each of the fluid communication channels extend laterally between two neighboring cavities of the cavities, such that each of the cavities are in fluid communication with one another.
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