Invention Grant
- Patent Title: Slurry compositions for chemical mechanical planarization
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Application No.: US16991975Application Date: 2020-08-12
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Publication No.: US11495471B2Publication Date: 2022-11-08
- Inventor: An-Hsuan Lee , Chun-Hung Liao , Chen-Hao Wu , Shen-Nan Lee , Teng-Chun Tsai , Huang-Lin Chao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/321
- IPC: H01L21/321 ; C09G1/02 ; H01L21/768
Abstract:
A semiconductor substrate has an exposed surface having a compositionally uniform metal, and an embedded surface having the metal and an oxide. The exposed surface is polished using a first slurry including a first abrasive and a first amine-based alkaline until the embedded surface is exposed. The embedded surface is polished using a second slurry including a second abrasive and a second amine-based alkaline. The second abrasive is different from the first abrasive. The second amine-based alkaline is different from the first amine-based alkaline. The metal and the oxide each has a first and a second removal rate in the first slurry, respectively, and a third and fourth removal rate in the second slurry, respectively. A ratio of the first removal rate to the second removal rate is greater than 30:1, and a ratio of the third removal rate to the fourth removal rate is about 1:0.5 to about 1:2.
Public/Granted literature
- US20210098266A1 Slurry Compositions For Chemical Mechanical Planarization Public/Granted day:2021-04-01
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