发明授权
- 专利标题: Amorphous spin diffusion layer for modified double magnetic tunnel junction structure
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申请号: US17204424申请日: 2021-03-17
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公开(公告)号: US11501810B2公开(公告)日: 2022-11-15
- 发明人: Daniel Worledge , Guohan Hu
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Daniel P. Morris, Esq.
- 主分类号: G11C11/16
- IPC分类号: G11C11/16 ; H01F10/32 ; H01L43/02 ; H01L43/08 ; H01L43/10 ; H01F10/13
摘要:
A modified double magnetic tunnel junction structure is provided which includes an amorphous spin diffusion layer (i.e., an amorphous non-magnetic, spin-conducting metallic layer) sandwiched between a magnetic free layer and a first tunnel barrier layer; the first tunnel barrier layer contacts a first magnetic reference layer. A second tunnel barrier layer is located on the magnetic free layer and a second magnetic reference layer is located on the second tunnel barrier layer. Such a modified double magnetic tunnel junction structure exhibits efficient switching (at a low current) and speedy readout (high tunnel magnetoresistance).