Invention Grant
- Patent Title: Amorphous spin diffusion layer for modified double magnetic tunnel junction structure
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Application No.: US17204424Application Date: 2021-03-17
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Publication No.: US11501810B2Publication Date: 2022-11-15
- Inventor: Daniel Worledge , Guohan Hu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01F10/32 ; H01L43/02 ; H01L43/08 ; H01L43/10 ; H01F10/13

Abstract:
A modified double magnetic tunnel junction structure is provided which includes an amorphous spin diffusion layer (i.e., an amorphous non-magnetic, spin-conducting metallic layer) sandwiched between a magnetic free layer and a first tunnel barrier layer; the first tunnel barrier layer contacts a first magnetic reference layer. A second tunnel barrier layer is located on the magnetic free layer and a second magnetic reference layer is located on the second tunnel barrier layer. Such a modified double magnetic tunnel junction structure exhibits efficient switching (at a low current) and speedy readout (high tunnel magnetoresistance).
Public/Granted literature
- US20220301612A1 AMORPHOUS SPIN DIFFUSION LAYER FOR MODIFIED DOUBLE MAGNETIC TUNNEL JUNCTION STRUCTURE Public/Granted day:2022-09-22
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