Invention Grant
- Patent Title: Method for providing a semiconductor device with silicon filled gaps
-
Application No.: US17093224Application Date: 2020-11-09
-
Publication No.: US11501968B2Publication Date: 2022-11-15
- Inventor: Dieter Pierreux , Anna Trovato , Kelly Houben , Steven van Aerde , Bert Jongbloed , Wilco A. Verweij
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; H01L29/78 ; H01L21/331 ; H01L27/092 ; H01L23/522 ; H01L23/532 ; H01L21/768 ; H01L21/311 ; H01L21/285
Abstract:
Method for filling a gap, comprising providing in a deposition chamber a semiconductor substrate having a gap, wherein a bottom of the gap includes a crystalline semiconducting material and wherein a side wall of the gap includes an amorphous material; depositing a silicon precursor in the gap.
Public/Granted literature
- US20210151315A1 METHOD FOR PROVIDING A SEMICONDUCTOR DEVICE WITH SILICON FILLED GAPS Public/Granted day:2021-05-20
Information query
IPC分类:
