Invention Grant
- Patent Title: Manufacturing method of silicon carbide semiconductor device and silicon carbide semiconductor device
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Application No.: US16968706Application Date: 2019-01-29
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Publication No.: US11501971B2Publication Date: 2022-11-15
- Inventor: Toru Onishi , Katsuhiro Kutsuki , Kensaku Yamamoto
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JPJP2018-026043 20180216
- International Application: PCT/JP2019/002879 WO 20190129
- International Announcement: WO2019/159680 WO 20190822
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/04 ; H01L29/16 ; H01L29/423 ; H01L29/51 ; H01L29/66 ; H01L29/78
Abstract:
A manufacturing method of a silicon carbide semiconductor device may include: forming a gate insulating film on a silicon carbide substrate; and forming a gate electrode on the gate insulating film. The forming of the gate insulating film may include forming an oxide film on the silicon carbide substrate by thermally oxidizing the silicon carbide substrate under a nitrogen atmosphere.
Public/Granted literature
- US20210013039A1 MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2021-01-14
Information query
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