公开(公告)号：US10170470B2

公开(公告)日：2019-01-01

申请号：US15684057

申请日：2017-08-23

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Toru Onishi ,  Katsuhiro Kutsuki ,  Yasushi Urakami ,  Yukihiko Watanabe

IPC: H01L29/78 ,  H01L29/06 ,  H01L27/088 ,  H01L29/423 ,  H01L29/16

Abstract: A switching device may include a semiconductor substrate; gate trenches; bottom insulating layers covering bottom surfaces of the gate trenches; gate insulating layers covering side surfaces of the gate trenches; and gate electrodes arranged in the gate trenches. The gate insulating layers in a center portion may have a first thickness and a first dielectric constant, and one or more of the gate insulating layers in a peripheral portion may have, within at least a part of the peripheral portion, a second thickness thicker than the first thickness and a second dielectric constant greater than the first dielectric constant. The semiconductor substrate may include a first region being in contact with the gate insulating layers, a body region being in contact with the gate insulating layers under the first region, and a second region being in contact with the gate insulating layers under the body region.

公开(公告)号：US10770580B2

公开(公告)日：2020-09-08

申请号：US16341340

申请日：2017-10-30

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Toru Onishi ,  Sachiko Aoi ,  Yasushi Urakami

IPC: H01L29/78 ,  H01L29/423

Abstract: In an end portion of a trench, an opening where the end portion of the trench is exposed is formed in a lead-out electrode, a side surface of the trench gate electrode on a top surface side of a semiconductor substrate is spaced from a trench side surface, and a range adjacent to a boundary line positioned between a top surface of the semiconductor substrate and the trench side surface is covered with a laminated insulating film configured such that an interlayer insulating film is laminated on a gate insulating film. This makes it possible to prevent dielectric breakdown of an insulating film.

公开(公告)号：US10141411B2

公开(公告)日：2018-11-27

申请号：US15435833

申请日：2017-02-17

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Atsushi Onogi ,  Toru Onishi ,  Shuhei Mitani ,  Yusuke Yamashita ,  Katsuhiro Kutsuki

IPC: H01L29/16 ,  G01K7/01 ,  G01K7/02 ,  H01L27/07 ,  H01L29/78 ,  H01L27/24 ,  H01L29/66 ,  H01L27/02 ,  H01L29/10 ,  H01L29/08 ,  H01L23/34 ,  H01L29/739 ,  H01L29/861

Abstract: A semiconductor device includes a semiconductor substrate of silicon carbide, and a temperature sensor portion. The semiconductor substrate includes a portion in which an n-type drift region and a p-type body region are laminated. The temperature sensor portion is disposed in the semiconductor substrate and is separated from the drift region by the body region. The temperature sensor portion includes an n-type cathode region being in contact with the body region, and a p-type anode region separated from the body region by the cathode region.

公开(公告)号：US11501971B2

公开(公告)日：2022-11-15

申请号：US16968706

申请日：2019-01-29

Applicant: DENSO CORPORATION

Inventor： Toru Onishi ,  Katsuhiro Kutsuki ,  Kensaku Yamamoto

IPC: H01L21/02 ,  H01L21/04 ,  H01L29/16 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

Abstract: A manufacturing method of a silicon carbide semiconductor device may include: forming a gate insulating film on a silicon carbide substrate; and forming a gate electrode on the gate insulating film. The forming of the gate insulating film may include forming an oxide film on the silicon carbide substrate by thermally oxidizing the silicon carbide substrate under a nitrogen atmosphere.