公开(公告)号：US11501971B2

公开(公告)日：2022-11-15

申请号：US16968706

申请日：2019-01-29

Applicant: DENSO CORPORATION

Inventor： Toru Onishi ,  Katsuhiro Kutsuki ,  Kensaku Yamamoto

IPC: H01L21/02 ,  H01L21/04 ,  H01L29/16 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

Abstract: A manufacturing method of a silicon carbide semiconductor device may include: forming a gate insulating film on a silicon carbide substrate; and forming a gate electrode on the gate insulating film. The forming of the gate insulating film may include forming an oxide film on the silicon carbide substrate by thermally oxidizing the silicon carbide substrate under a nitrogen atmosphere.