Invention Grant
- Patent Title: Monolithic charge coupled field effect rectifier embedded in a charge coupled field effect transistor
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Application No.: US17217689Application Date: 2021-03-30
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Publication No.: US11502192B2Publication Date: 2022-11-15
- Inventor: Shin Phay Lee , Voon Cheng Ngwan , Maurizio Gabriele Castorina
- Applicant: STMicroelectronics Pte Ltd
- Applicant Address: SG Singapore
- Assignee: STMicroelectronics Pte Ltd
- Current Assignee: STMicroelectronics Pte Ltd
- Current Assignee Address: SG Singapore
- Agency: Crowe & Dunlevy
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/40 ; H01L29/423 ; H01L29/66 ; H01L27/07 ; H01L29/06 ; H01L29/861 ; H01L27/24
Abstract:
An integrated circuit includes a MOSFET device and a monolithic diode device, wherein the monolithic diode device is electrically connected in parallel with a body diode of the MOSFET device. The monolithic diode device is configured so that a forward voltage drop VfD2 of the monolithic diode device is less than a forward voltage drop VfD1 of the body diode of the MOSFET device. The forward voltage drop VfD2 is process tunable by controlling a gate oxide thickness, a channel length and body doping concentration level. The tunability of the forward voltage drop VfD2 advantageously permits design of the integrated circuit to suit a wide range of applications according to requirements of switching speed and efficiency.
Public/Granted literature
- US20210336047A1 MONOLITHIC CHARGE COUPLED FIELD EFFECT RECTIFIER EMBEDDED IN A CHARGE COUPLED FIELD EFFECT TRANSISTOR Public/Granted day:2021-10-28
Information query
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