公开(公告)号：US11502192B2

公开(公告)日：2022-11-15

申请号：US17217689

申请日：2021-03-30

Applicant: STMicroelectronics Pte Ltd

Inventor： Shin Phay Lee ,  Voon Cheng Ngwan ,  Maurizio Gabriele Castorina

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L27/07 ,  H01L29/06 ,  H01L29/861 ,  H01L27/24

Abstract: An integrated circuit includes a MOSFET device and a monolithic diode device, wherein the monolithic diode device is electrically connected in parallel with a body diode of the MOSFET device. The monolithic diode device is configured so that a forward voltage drop VfD2 of the monolithic diode device is less than a forward voltage drop VfD1 of the body diode of the MOSFET device. The forward voltage drop VfD2 is process tunable by controlling a gate oxide thickness, a channel length and body doping concentration level. The tunability of the forward voltage drop VfD2 advantageously permits design of the integrated circuit to suit a wide range of applications according to requirements of switching speed and efficiency.