Invention Grant
- Patent Title: Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance
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Application No.: US16022094Application Date: 2018-06-28
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Publication No.: US11508903B2Publication Date: 2022-11-22
- Inventor: Angeline Smith , Ian Young , Kaan Oguz , Sasikanth Manipatruni , Christopher Wiegand , Kevin O'Brien , Tofizur Rahman , Noriyuki Sato , Benjamin Buford , Tanay Gosavi
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L27/22 ; H01L43/10
Abstract:
An insertion layer for perpendicular spin orbit torque (SOT) memory devices between the SOT electrode and the free magnetic layer, memory devices and computing platforms employing such insertion layers, and methods for forming them are discussed. The insertion layer is predominantly tungsten and improves thermal stability and perpendicular magnetic anisotropy in the free magnetic layer.
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