- 专利标题： Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance
-
申请号： US16022094申请日： 2018-06-28
-
公开(公告)号： US11508903B2公开(公告)日： 2022-11-22
- 发明人: Angeline Smith , Ian Young , Kaan Oguz , Sasikanth Manipatruni , Christopher Wiegand , Kevin O'Brien , Tofizur Rahman , Noriyuki Sato , Benjamin Buford , Tanay Gosavi
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Essential Patents Group, LLP
- 主分类号： H01L43/02
- IPC分类号： H01L43/02 ; H01L27/22 ; H01L43/10
摘要：
An insertion layer for perpendicular spin orbit torque (SOT) memory devices between the SOT electrode and the free magnetic layer, memory devices and computing platforms employing such insertion layers, and methods for forming them are discussed. The insertion layer is predominantly tungsten and improves thermal stability and perpendicular magnetic anisotropy in the free magnetic layer.
公开/授权文献
信息查询
IPC分类:
