Invention Grant
- Patent Title: System and methods for wafer drying
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Application No.: US16820344Application Date: 2020-03-16
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Publication No.: US11515178B2Publication Date: 2022-11-29
- Inventor: Trace Hurd , Antonio Luis Pacheco Rotondaro , Derek William Bassett , Hitoshi Kosugi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/67
- IPC: H01L21/67

Abstract:
In one example, a method for wafer drying includes providing a surface of a first wafer, the surface of the first wafer including a liquid to be removed with a drying process. The method further includes replacing the liquid with a first solid film in a first processing chamber, the first solid film covering the surface of the first wafer. The method further includes transferring the first wafer from the first processing chamber to a second processing chamber. The method further includes processing the first wafer in the second processing chamber by flowing a supercritical fluid through the second processing chamber, where the supercritical fluid removes the first solid film.
Public/Granted literature
- US20210287919A1 System and Methods for Wafer Drying Public/Granted day:2021-09-16
Information query
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