公开(公告)号：US11217451B2

公开(公告)日：2022-01-04

申请号：US16737526

申请日：2020-01-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi Kosugi ,  Shota Umezaki ,  Kouzou Tachibana ,  Ryo Yamamoto

IPC: H01L21/306 ,  H01L21/687 ,  H01L21/67

Abstract: A method includes rotating a substrate, supplying a first processing liquid from a first nozzle to the substrate during a first period, and supplying a second processing liquid from a second nozzle to the substrate during a second period. First and second liquid columns are formed by the first and second processing liquids during at least partially overlapped period of the first and second periods, respectively. The shapes and arrangements of the first and second liquid columns satisfy that: at least one of first and second central axis lines of the first and second liquid columns is inclined with respect to a rotational axis line of the substrate, first and second cut surfaces obtained by cutting the first and second liquid columns along a horizontal plane at least partially overlap each other, and any point on the first central axis line is located on the second central axis line.

公开(公告)号：US20210287919A1

公开(公告)日：2021-09-16

申请号：US16820344

申请日：2020-03-16

Applicant: Tokyo Electron Limited

Inventor： Trace Hurd ,  Antonio Luis Pacheco Rotondaro ,  Derek William Bassett ,  Hitoshi Kosugi

IPC: H01L21/67

Abstract: In one example, a method for wafer drying includes providing a surface of a first wafer, the surface of the first wafer including a liquid to be removed with a drying process. The method further includes replacing the liquid with a first solid film in a first processing chamber, the first solid film covering the surface of the first wafer. The method further includes transferring the first wafer from the first processing chamber to a second processing chamber. The method further includes processing the first wafer in the second processing chamber by flowing a supercritical fluid through the second processing chamber, where the supercritical fluid removes the first solid film.

公开(公告)号：US12002687B2

公开(公告)日：2024-06-04

申请号：US17993721

申请日：2022-11-23

Applicant: Tokyo Electron Limited

Inventor： Trace Hurd ,  Antonio Luis Pacheco Rotondaro ,  Derek William Bassett ,  Hitoshi Kosugi

IPC: H01L21/67

CPC classification number: H01L21/67034 ,  H01L21/6704 ,  H01L21/67184

Abstract: In one example, a method for wafer drying includes providing a surface of a first wafer, the surface of the first wafer including a liquid to be removed with a drying process. The method further includes replacing the liquid with a first solid film in a first processing chamber, the first solid film covering the surface of the first wafer. The method further includes transferring the first wafer from the first processing chamber to a second processing chamber. The method further includes processing the first wafer in the second processing chamber by flowing a supercritical fluid through the second processing chamber, where the supercritical fluid removes the first solid film.

公开(公告)号：US11515178B2

公开(公告)日：2022-11-29

申请号：US16820344

申请日：2020-03-16

Applicant: Tokyo Electron Limited

Inventor： Trace Hurd ,  Antonio Luis Pacheco Rotondaro ,  Derek William Bassett ,  Hitoshi Kosugi

IPC: H01L21/67

Abstract: In one example, a method for wafer drying includes providing a surface of a first wafer, the surface of the first wafer including a liquid to be removed with a drying process. The method further includes replacing the liquid with a first solid film in a first processing chamber, the first solid film covering the surface of the first wafer. The method further includes transferring the first wafer from the first processing chamber to a second processing chamber. The method further includes processing the first wafer in the second processing chamber by flowing a supercritical fluid through the second processing chamber, where the supercritical fluid removes the first solid film.

公开(公告)号：US11309194B2

公开(公告)日：2022-04-19

申请号：US15883481

申请日：2018-01-30

Applicant: Tokyo Electron Limited

Inventor： Koji Tanaka ,  Toshiyuki Shiokawa ,  Koji Yamashita ,  Hiroyuki Masutomi ,  Hitoshi Kosugi ,  Takao Inada ,  Takashi Ikeda ,  Tsukasa Hirayama

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/677

Abstract: A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. When the lid is positioned at the close position, the splash shielding portion extends from a position higher than an upper end of a side wall of the inner tank adjacent to the splash shielding portion to a position which is lower than the upper end of the side wall and which is on the outer tank side of the side wall.

公开(公告)号：US20230092779A1

公开(公告)日：2023-03-23

申请号：US17993721

申请日：2022-11-23

Applicant: Tokyo Electron Limited

Inventor： Trace Hurd ,  Antonio Luis Pacheco Rotondaro ,  Derek William Bassett ,  Hitoshi Kosugi

IPC: H01L21/67

Abstract: In one example, a method for wafer drying includes providing a surface of a first wafer, the surface of the first wafer including a liquid to be removed with a drying process. The method further includes replacing the liquid with a first solid film in a first processing chamber, the first solid film covering the surface of the first wafer. The method further includes transferring the first wafer from the first processing chamber to a second processing chamber. The method further includes processing the first wafer in the second processing chamber by flowing a supercritical fluid through the second processing chamber, where the supercritical fluid removes the first solid film.

公开(公告)号：US11545367B2

公开(公告)日：2023-01-03

申请号：US17154049

申请日：2021-01-21

Applicant: Tokyo Electron Limited

Inventor： Tetsuya Sakazaki ,  Hitoshi Kosugi

IPC: H01L21/67 ,  H01L21/3213

Abstract: A substrate processing apparatus includes a substrate rotator that holds and rotates a substrate including a film of a metal formed on a surface thereof, a first supply that supplies a first processing liquid containing a chelating agent and a solvent toward the substrate, a second supply that supplies a second processing liquid containing water toward the substrate, and a controller that controls the substrate rotator, the first supply, and the second supply. While rotating the substrate by the substrate rotator, the controller supplies the first processing liquid toward the substrate by the first supply to generate a complex containing the metal and the chelating agent, and after the generation of the complex, supplies the second processing liquid toward the substrate by the second supply to dissolve the complex in the second processing liquid.