Invention Grant
- Patent Title: Materials and methods for chemical mechanical polishing of ruthenium-containing materials
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Application No.: US17175986Application Date: 2021-02-15
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Publication No.: US11525072B2Publication Date: 2022-12-13
- Inventor: An-Hsuan Lee , Shen-Nan Lee , Chen-Hao Wu , Chun-Hung Liao , Teng-Chun Tsai , Huang-Lin Chao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: C09G1/02
- IPC: C09G1/02 ; H01L21/321 ; H01L21/762
Abstract:
A chemical mechanical polishing (CMP) slurry composition includes an oxidant including oxygen, and an abrasive particle having a core structure encapsulated by a shell structure. The core structure includes a first compound and the shell structure includes a second compound different from the first compound, where a diameter of the core structure is greater than a thickness of the shell structure, and where the first compound is configured to react with the oxidant to form a reactive oxygen species.
Public/Granted literature
- US20210171800A1 Materials and Methods for Chemical Mechanical Polishing of Ruthenium-Containing Materials Public/Granted day:2021-06-10
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