Invention Grant
- Patent Title: Contact pad for semiconductor device
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Application No.: US17181202Application Date: 2021-02-22
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Publication No.: US11527502B2Publication Date: 2022-12-13
- Inventor: Chang-Chia Huang , Tsung-Shu Lin , Cheng-Chieh Hsieh , Wei-Cheng Wu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/56 ; H01L23/00 ; H01L23/488 ; H01L21/768 ; H01L23/31 ; H01L21/683 ; H01L25/10

Abstract:
A device and method of manufacture is provided that utilize a dummy pad feature adjacent contact pads. The contact pads may be contact pads in an integrated fan-out package in which a molding compound is placed along sidewalls of a die and the contact pads extend over the die and the molding compound. The contact pads are electrically coupled to the die using one or more redistribution layers. The dummy pad features are electrically isolated from the contact pads. In some embodiments, the dummy pad features partially encircle the contact pads and are located in a corner region of the molding compound, a corner region of the die, and/or an interface region between an edge of the die and the molding compound.
Public/Granted literature
- US20210175191A1 Contact Pad for Semiconductor Device Public/Granted day:2021-06-10
Information query
IPC分类: