Invention Grant
- Patent Title: Gapfill structure and manufacturing methods thereof
-
Application No.: US17197925Application Date: 2021-03-10
-
Publication No.: US11532523B2Publication Date: 2022-12-20
- Inventor: Sung-En Lin , Chi On Chui , Fang-Yi Liao , Chunyao Wang , Yung-Cheng Lu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/28 ; H01L21/762 ; H01L21/764 ; H01L27/092 ; H01L29/06 ; H01L29/49 ; H01L29/66 ; H01L29/78
Abstract:
A method includes patterning a trench and depositing a first insulating material along sidewalls and a bottom surface of the trench using a conformal deposition process. Depositing the first insulating material includes forming a first seam between a first portion of the first insulating material on a first sidewall of the trench and a second portion of the first insulating material on a second sidewall of the trench. The method further includes etching the first insulating material below a top of the trench and depositing a second insulating material over the first insulating material and in the trench using a conformal deposition process. Depositing the second insulating material comprises forming a second seam between a first portion of the second insulating material on the first sidewall of the trench and a second portion of the second insulating material on a second sidewall of the trench.
Public/Granted literature
- US11557518B2 Gapfill structure and manufacturing methods thereof Public/Granted day:2023-01-17
Information query
IPC分类:
