Invention Grant
- Patent Title: Quantum dot material, and preparation method and use thereof
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Application No.: US15931781Application Date: 2020-05-14
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Publication No.: US11535796B2Publication Date: 2022-12-27
- Inventor: Xiaowei Sun , Kai Wang , Fan Fang , Hongcheng Yang , Bing Xu , Yizun Liu , Xiang Li
- Applicant: SHENZHEN PLANCK INNOVATION TECHNOLOGY CO., LTD
- Applicant Address: CN Shenzhen
- Assignee: SHENZHEN PLANCK INNOVATION TECHNOLOGY CO., LTD
- Current Assignee: SHENZHEN PLANCK INNOVATION TECHNOLOGY CO., LTD
- Current Assignee Address: CN Shenzhen
- Agency: Hunton Andrews Kurth LLP
- Priority: CN201910711600.1 20190802
- Main IPC: C09K11/02
- IPC: C09K11/02 ; C09K11/08 ; C09K11/62 ; C09K11/66 ; C09K11/70 ; C09K11/88 ; H01L33/50 ; B82Y40/00

Abstract:
Provided are a quantum dot material, a preparation method and use thereof. The quantum material includes a quantum dot, and a first cladding layer and a second cladding clad outside of the quantum dot, wherein the first cladding layer is located between the quantum dot and the second cladding layer. The quantum dot material provided herein has good water and oxygen barrier properties and good stability.
Public/Granted literature
- US20210032534A1 QUANTUM DOT MATERIAL, AND PREPARATION METHOD AND USE THEREOF Public/Granted day:2021-02-04
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