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公开(公告)号:US11535796B2
公开(公告)日:2022-12-27
申请号:US15931781
申请日:2020-05-14
Inventor: Xiaowei Sun , Kai Wang , Fan Fang , Hongcheng Yang , Bing Xu , Yizun Liu , Xiang Li
Abstract: Provided are a quantum dot material, a preparation method and use thereof. The quantum material includes a quantum dot, and a first cladding layer and a second cladding clad outside of the quantum dot, wherein the first cladding layer is located between the quantum dot and the second cladding layer. The quantum dot material provided herein has good water and oxygen barrier properties and good stability.
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公开(公告)号:US20210032534A1
公开(公告)日:2021-02-04
申请号:US15931781
申请日:2020-05-14
Inventor: Xiaowei Sun , Kai Wang , Fan Fang , Hongcheng Yang , Bing Xu , Yizun Liu , Xiang Li
Abstract: Provided are a quantum dot material, a preparation method and use thereof. The quantum material includes a quantum dot, and a first cladding layer and a second cladding clad outside of the quantum dot, wherein the first cladding layer is located between the quantum dot and the second cladding layer. The quantum dot material provided herein has good water and oxygen barrier properties and good stability.
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