- 专利标题： Stacked transistors with different channel widths
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申请号： US16932362申请日： 2020-07-17
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公开(公告)号： US11538720B2公开(公告)日： 2022-12-27
- 发明人: Kangguo Cheng , Lawrence A. Clevenger , Balasubramanian S. Pranatharthiharan , John Zhang
- 申请人： TESSERA LLC
- 申请人地址： US CA San Jose
- 专利权人： TESSERA LLC
- 当前专利权人： TESSERA LLC
- 当前专利权人地址： US CA San Jose
- 代理机构： Haley Guiliano LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L29/06 ; H01L29/66 ; H01L29/08 ; H01L21/306 ; H01L29/423 ; H01L21/02 ; H01L29/786 ; H01L29/78 ; H01L29/40 ; H01L29/775 ; H01L27/088
摘要：
A semiconductor device includes a first stack of nanowires above a substrate with a first gate structure over, around, and between the first stack of nanowires and a second stack of nanowires above the substrate with a second gate structure over, around, and between the second stack of nanowires. The device also includes a first source/drain region contacting a first number of nanowires of the first nanowire stack and a second source/drain region contacting a second number of nanowires of the second nanowire stack such that the first number and second number of contacted nanowires are different.
公开/授权文献
- US20200350211A1 STACKED TRANSISTORS WITH DIFFERENT CHANNEL WIDTHS 公开/授权日：2020-11-05
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