Invention Grant
- Patent Title: Structures and methods for memory cells
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Application No.: US16124877Application Date: 2018-09-07
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Publication No.: US11538808B2Publication Date: 2022-12-27
- Inventor: Sean T. Ma , Aaron D. Lilak , Abhishek A. Sharma , Van H. Le , Seung Hoon Sung , Gilbert W. Dewey , Benjamin Chu-Kung , Jack T. Kavalieros , Tahir Ghani
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Akona IP PC
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/00 ; H01L27/108 ; H01L21/822 ; H01L23/528 ; H01L49/02 ; H01L29/06 ; H01L21/02 ; H01L29/66

Abstract:
Disclosed herein are memory cells and memory arrays, as well as related methods and devices. For example, in some embodiments, a memory device may include: a support having a surface; and a three-dimensional array of memory cells on the surface of the support, wherein individual memory cells include a transistor and a capacitor, and a channel of the transistor in an individual memory cell is oriented parallel to the surface.
Public/Granted literature
- US20200083225A1 STRUCTURES AND METHODS FOR MEMORY CELLS Public/Granted day:2020-03-12
Information query
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