Invention Grant
- Patent Title: Integrated assemblies having metal-containing liners along bottoms of trenches, and methods of forming integrated assemblies
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Application No.: US16445065Application Date: 2019-06-18
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Publication No.: US11538822B2Publication Date: 2022-12-27
- Inventor: John D. Hopkins , Justin D. Shepherdson , Collin Howder , Jordan D. Greenlee
- Applicant: Micron Technology, inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, inc.
- Current Assignee: Micron Technology, inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11556 ; H01L21/02 ; H01L27/11565 ; H01L21/311 ; H01L21/285 ; H01L27/11519 ; H01L29/66 ; H01L21/28
Abstract:
Some embodiments include methods of forming integrated assemblies. A conductive structure is formed to include a semiconductor-containing material over a metal-containing material. An opening is formed to extend into the conductive structure. A conductive material is formed along a bottom of the opening. A stack of alternating first and second materials is formed over the conductive structure either before or after forming the conductive material. Insulative material and/or channel material is formed to extend through the stack to contact the conductive material. Some embodiments include integrated assemblies.
Information query
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